广泛应用于半导体腔体最核心部件静电卡盘（ESC）边缘，保护ESC内部不受等离子体侵蚀，具有极强的使用寿命、极低表面颗粒物及析出物使用效果。
Widely applied on the periphery of electrostatic chucks (ESC) — the core compo- nents of semiconductor chambers — this technology effectively shields ESC inter- nals from plasma-induced erosion, demonstrating exceptional service longevity along with minimized surface particulate contamination and outgassing effects during operation.
设计特点及优势
Design Features and Advantages
1
使用超洁净、耐等离子体、极低金属离子溶出的材料。
Utilizes materials engineered with ultra-clean characteristics, plasma-resistant properties, and minimal metallic ion leaching performance.
2
类型丰富：包含截面为矩形、梯形、圆弧形等，包含宽、大、极细型。
Diverse configurations:Incorporating cross-sectional geometries such as rectan-gular,trapezoidal(V-shaped),and circular-arc(O-type) profiles,with dimensional variations spanning wide-body,large-scale,and ultra-slim designs.
好事例：
功能密封件E-seal ring结构设计改善
  • 通过调整整体的尺寸和结构,有效保护ESC,并使edge ring 自动居中
  • 提高ESC超过50%使用寿命，提高wafer边缘良率，在重点客户已验证并量产供应
序号 量产清单
1 CS-OR-T091839-510-0010
2 CS-OR-T102863-016-0010厚
3 CS-OR-T102863-016-0010薄D-DEMO
4 CS-OR-T019090-374-1113
5 CS-OR-T019090-328-1113_DEMO
6 CS-OR-T019090-328-1113A_DEMO
7 CS-OR-T019090-328-0012
8 CS-OR-T102863-077-6068_DEMO
9 CS-OR-T019090-374-0013薄
10 CS-OR-T102863-111-0010